EpiBlu is the exclusive provider of low temperture RPCVD custom epitaxy, as well as offering MOCVD and hybrid RPCVD/MOCVD growth to customers.
If you are looking for a competive advantage for your next innovation, talk to us today.
EpiBlu offers both MOCVD and low temperature Remote Plasma Chemical Vapour Deposition (RPCVD) services as-well as hybrid MOCVD & RPCVD growth to harness the advantages of each technology in a single wafer.
This capability is enabling the development of new applications and improved device properties. If you are looking for a competitive edge for your next product, we’d love to talk to you about your next innovation.
Metal Organic Chemical Vapour Deposition
EpiBlu’s extensive MOCVD expertise enables us to grow a wide range of epitaxial structures to our own or to customer’s designs. We recognize that time-to-market is critical to our customers’ success, so we strive to provide the fastest turnaround times possible.
Our epitaxy engineers work closely with customers to develop and improve proprietary structures for specific applications.
Remote Plasma Chemical Vapour Deposition
EpiBlu has exclusive access to a breakthrough low temperature process using Remote Plasma Chemical Vapour Deposition (RPCVD) for the deposition of III nitrides. RPCVD combines the scalability potential of MOCVD with the unique benefits of a nitrogen plasma source and lower temperature, lower cost manufacturing, promising higher performing devices.
Could RPCVD help drive your next innovation?
RPCVD Vs. MOCVD
RPCVD works in a similar way to MOCVD, where a mixture of gases are introduced into the reaction chamber for deposition of thin films on a heated substrate.
Whereas MOCVD uses thermal decomposition of ammonia (NH3) to provide active nitrogen, RPCVD uses a nitrogen (N2) plasma source. This arrangement provides a direct source of nitrogen used for the deposition of GaN. The nitrogen plasma generation is not dependent on high temperature to provide a source of reactive nitrogen atoms. This allows for the growth of GaN to be carried out at temperatures several hundred degrees cooler than those used in MOCVD, while maintaining the critical crystalline quality necessary for high performance devices.
RPCVD Offers a Number of Advantages for Manufacturers
LED (Blue, Green, Yellow, UV)
- Low temperature p-GaN grown on top of MOCVD grown MQWs should enable increased LED efficiency by reducing the thermal budget and subsequent degradation of the MQW quality during p-GaN growth
- Low temperature MQW growth combined with low temperature p-GaN should enable indium rich InGaN and increase device performance (for longer wavelengths such as green, yellow and red)
- Low temperature RPCVD has the potential to reduce bowing and cracking of large silicon wafers during III nitride growth. Its inherent process could also reduce the complexity of the required strain management• RPCVD can potentially enable high quality aluminium rich AlGaN to help achieve increased UV LED efficiency. This is also applicable to AlN templates.
- Low temperature RPCVD has the potential to reduce bowing and cracking of large silicon wafers during III nitride growth. Its inherent process could also reduce the complexity of the required strain management
- Low temperature RPCVD has the potential to grow indium rich InGaN. This could enable the full range of InGaN compositions in order to provide the appropriate bandgap engineering and maximise the energy conversion in multi junction solar cells